Visual Overview
Technical Details
Comprehensive specifications and technical information
Quick Overview
The XY8R512K40/1M40 is a high-reliability, high-speed, asynchronous, low-power, radiation-hardened static random-access memory (SRAM) chip. Fabricated with 0.13 μm CMOS technology, it provides capacities of 20 Mb (512 K × 40 bit) and 40 Mb (1 M × 40 bit). The device serves as a general-purpose data storage chip suitable for aerospace computing control and data processing systems.
Key Specifications
| Parameter | Value |
|---|---|
| Process Technology | 0.13 μm |
| Dimensions (mm) | 29 × 29 × 3 |
| Capacity | 512 K / 1 M × 40 bit |
| Access Time | 22 ns |
| Operating Temperature (°C) | −55 to +125 |
| Package Type | CQFP132 / CFP84 |
| Quality Grade | CAST C |
Key Features
- High reliability, high speed, and asynchronous operation.
- Capacity of 512 K / 1 M × 40 bit.
- Access time of 22 ns with stable performance under radiation exposure.
- Designed for aerospace-grade data storage applications.
Applications
- Used in aerospace embedded electronic systems, first verified in orbit in 2019.
Documentation & Resources
Frequently Asked Questions
Common questions about XY8R512K40/1M40 20M/40Mb Anti-Radiation SRAM
What capacities does the XY8R512K40/1M40 SRAM offer?
It provides 20 Mb (512 K x 40 bit) and 40 Mb (1 M x 40 bit) capacities. It is a high-reliability, high-speed, asynchronous, low-power radiation-hardened SRAM.
What is the access time of this SRAM?
The device has an access time of 22 ns and maintains stable performance under radiation exposure, fabricated on 0.13 um CMOS technology.
What packages and quality grade are available?
The SRAM is offered in CQFP132 and CFP84 packages at CAST C quality grade, with dimensions of 29 x 29 x 3 mm, operating from -55 to +125 C.
Has the XY8R512K40/1M40 been verified in orbit?
Yes. It was first verified in orbit in 2019 and is used for aerospace computing control and data processing systems.
