Visual Overview
Technical Details
Comprehensive specifications and technical information
Triple Junction GaAs Solar Cell - High-Efficiency Solar Power for Space Applications
Product Introduction
The Triple Junction GaAs Solar Cell - TJ30 CICs is a GalnP/GaAs/Ge on Ge substrate solar cell assembly, featuring a triple junction design for optimal performance. Equipped with an external Si bypass diode, interconnectors, and cover glass, this cell offers unparalleled energy efficiency for a range of demanding applications.
Product Image
Design and Mechanical Data
| Parameter | Specification |
|---|---|
| Substrate material | P-Ge |
| Base material | GaInP/GaAs/Ge |
| Cell thickness | 150μm±20μm |
| AR-coating | TiOx/Al₂O₃ |
| Cover glass | KFG120 |
| Cover glass thickness | 120μm |
| CICs dimensions | (40.1±0.05)mm×(80.1±0.05)mm |
| CICs thickness | 300μm±25μm |
| Interconnector thickness | 30μm |
| Average weight | ≤115mg/cm² |
| Bypass protection | External Si diode |
| Extra option | ITO cover glass |
Appearance and Dimensions
The solar cell assembly features precise dimensions of 40.1mm × 80.1mm with a total thickness of 300μm±25μm, including the cover glass and interconnectors. The compact design ensures optimal integration into solar arrays while maintaining structural integrity.
Typical Performance Data
| Parameter | Value @ AM0 (1353W/m², T=25℃) |
|---|---|
| Efficiency ηbare | 30.00% |
| Open Circuit Voc | 2740mV |
| Short Circuit Jsc | 17.4 mA/cm² |
| Current @ Max. Power Jm | 16.8 mA/cm² |
| Voltage @ Max. Power Vm | 2.42V |
Cell Structure
The triple junction cell structure consists of multiple layers optimized for maximum light absorption across different wavelengths:
- Top Junction: GaInP layer for high-energy photon absorption
- Middle Junction: GaAs layer for mid-spectrum efficiency
- Bottom Junction: Ge substrate for low-energy photon capture
- AR Coating: TiOx/Al₂O₃ anti-reflection coating for enhanced light transmission
- Cover Glass: KFG120 protective layer with 120μm thickness
- Bypass Diode: External Si diode for shadow protection
Radiation Degradation
Performance retention after 1 MeV electron radiation exposure:
| Parameter | 1×10¹⁴/cm² | 5×10¹⁴/cm² | 1×10¹⁵/cm² |
|---|---|---|---|
| Isc | 0.99 | 0.98 | 0.96 |
| Voc | 0.94 | 0.90 | 0.88 |
| Pmax | 0.94 | 0.88 | 0.84 |
The cell demonstrates excellent radiation hardness, maintaining over 84% of maximum power output even after exposure to 1×10¹⁵/cm² electron fluence, making it ideal for long-duration space missions.
Typical Performance Curves
The I-V and P-V characteristic curves demonstrate stable performance across varying operating conditions. The cell maintains high efficiency under AM0 spectrum with minimal temperature coefficient, ensuring reliable power generation throughout the mission lifetime.
Typical Applications
These triple-junction GaAs solar cells are renowned for their superior radiation resistance and high efficiency, making them ideal for various high-tech and demanding applications.
Space Applications
- Satellites: Used in communication and Earth observation satellites for reliable energy support.
- Space Exploration: Ideal for deep-space missions, lunar, and Martian bases.
- Space Stations: Crucial for energy systems of the International Space Station and future space infrastructures.
Earth Applications
- UAVs and Aircraft: Used in high-altitude long-endurance unmanned aerial vehicles (HALE UAVs) and solar-powered aircraft.
- Independent Energy Systems: Suitable for remote areas or emergency response in disaster situations.
Related Products
Looking for more solar solutions? Check out our flexible solar wings and rigid solar array systems.
Frequently Asked Questions
Common questions about Triple Junction GaAs Solar Cell - High-Efficiency Solar Power for Space Applications
What missions is this product suitable for?
Ideal for satellites, communication systems, Earth observation platforms, and deep space exploration missions. Perfect for space stations, lunar and Martian bases, and high-altitude long-endurance UAVs requiring superior radiation resistance and high conversion efficiency.
How does this product compare to related products?
Triple junction GalnP/GaAs/Ge design provides significantly higher efficiency than single-junction solar cells, with superior radiation resistance maintaining performance in harsh space environments. Outperforms traditional silicon cells by 30-40% in conversion efficiency while offering proven space heritage.
What are the key technical advantages?
Exceptional radiation hardness ensures long-term performance degradation resistance in space. Triple junction construction maximizes light absorption across multiple wavelengths, while integrated Si bypass diode provides protection against shadowing effects. Cover glass protection offers enhanced durability against micrometeoroid impacts.
How does it integrate with other systems?
Standard CIC (Cell Interconnect Coverglass) configuration enables easy integration into solar arrays and panels. Compatible with various solar array architectures including rigid, flexible, and deployable systems. Standardized interconnectors facilitate seamless electrical integration with power management and distribution systems.
What support and documentation is available?
Complete technical documentation includes cell structure specifications, radiation degradation data, performance curves, and mechanical dimensions. Our team provides detailed integration guidelines, testing protocols, and application-specific support to ensure optimal solar array configuration and mission success.